Memristors Retain Data 10 Years Without Power

The internet of things ( IoT) is coming, that much we know. But still it won’t; not until we have components and chips that can handle the explosion of data that comes with IoT. In 2020, there will already be 50 billion industrial internet sensors in place all around us. A single autonomous device – a smart watch, a cleaning robot, or a driverless car – can produce gigabytes of data each day, whereas an airbus may have over 10 000 sensors in one wing alone.

Two hurdles need to be overcome. First, current transistors in computer chips must be miniaturized to the size of only few nanometres; the problem is they won’t work anymore then. Second, analysing and storing unprecedented amounts of data will require equally huge amounts of energy. Sayani Majumdar, Academy Fellow at Aalto University (Finland), along with her colleagues, is designing technology to tackle both issues.

Majumdar has with her colleagues designed and fabricated the basic building blocks of future components in what are called “neuromorphiccomputers inspired by the human brain. It’s a field of research on which the largest ICT companies in the world and also the EU are investing heavily. Still, no one has yet come up with a nano-scale hardware architecture that could be scaled to industrial manufacture and use.

The probe-station device (the full instrument, left, and a closer view of the device connection, right) which measures the electrical responses of the basic components for computers mimicking the human brain. The tunnel junctions are on a thin film on the substrate plate.

The technology and design of neuromorphic computing is advancing more rapidly than its rival revolution, quantum computing. There is already wide speculation both in academia and company R&D about ways to inscribe heavy computing capabilities in the hardware of smart phones, tablets and laptops. The key is to achieve the extreme energy-efficiency of a biological brain and mimic the way neural networks process information through electric impulses,” explains Majumdar.

In their recent article in Advanced Functional Materials, Majumdar and her team show how they have fabricated a new breed of “ferroelectric tunnel junctions”, that is, few-nanometre-thick ferroelectric thin films sandwiched between two electrodes. They have abilities beyond existing technologies and bode well for energy-efficient and stable neuromorphic computing.

The junctions work in low voltages of less than five volts and with a variety of electrode materials – including silicon used in chips in most of our electronics. They also can retain data for more than 10 years without power and be manufactured in normal conditions.

Tunnel junctions have up to this point mostly been made of metal oxides and require 700 degree Celsius temperatures and high vacuums to manufacture. Ferroelectric materials also contain lead which makes them – and all our computers – a serious environmental hazard.

Our junctions are made out of organic hydro-carbon materials and they would reduce the amount of toxic heavy metal waste in electronics. We can also make thousands of junctions a day in room temperature without them suffering from the water or oxygen in the air”, explains Majumdar.

What makes ferroelectric thin film components great for neuromorphic computers is their ability to switch between not only binary states – 0 and 1 – but a large number of intermediate states as well. This allows them to ‘memoriseinformation not unlike the brain: to store it for a long time with minute amounts of energy and to retain the information they have once received – even after being switched off and on again.

We are no longer talking of transistors, but ‘memristors’. They are ideal for computation similar to that in biological brains.  Take for example the Mars 2020 Rover about to go chart the composition of another planet. For the Rover to work and process data on its own using only a single solar panel as an energy source, the unsupervised algorithms in it will need to use an artificial brain in the hardware.

What we are striving for now, is to integrate millions of our tunnel junction memristors into a network on a one square centimetre area. We can expect to pack so many in such a small space because we have now achieved a record-high difference in the current between on and off-states in the junctions and that provides functional stability. The memristors could then perform complex tasks like image and pattern recognition and make decisions autonomously,” says Majumdar.

Source: http://www.aalto.fi/

Black Silicon Solar Cells Efficiency Jump

Researchers from Aalto University (Finland) together with colleagues from Universitat Politècnica de Catalunya (Spain) have obtained the record-breaking efficiency of 22.1% on nanostructured silicon solar cells as certified by Fraunhofer ISE CalLab. An almost 4% absolute increase to their previous record is achieved by applying a thin passivating film on the nanostructures by Atomic Layer Deposition, and by integrating all metal contacts on the back side of the cell.black_silicon_solar_cell_hele_savin_aalto_university_en

The surface recombination has long been the bottleneck of black silicon solar cells and has so far limited the cell efficiencies to only modest values. The new record cells consists of a thick back-contacted structure that is known to be highly sensitive to the front surface recombination. The certified external quantum efficiency of 96% at 300nm wavelength demonstrates that the increased surface recombination problem no longer exists and for the first time the black silicon is not limiting the final energy conversion efficiency. The energy conversion efficiency is not the only parameter that we should look at, explains Professor Hele Savin from Aalto University, who coordinated the study. Due to the ability of black cells to capture solar radiation from low angles, they generate more electricity already over the duration of one day as compared to the traditional cells.

The results were published online 18.5.2015 in Nature Nanotechnology.
Source: http://www.aalto.fi/

The World’s Thinnest Sheet of Glass Is Two Atoms Thick

Researchers at Cornell and Germany’s University of Ulm have created the world’s thinnest pane of glass, a step towards a nanocomputer. The glass, made of silicon and oxygen, formed accidentally when the scientists were making graphene, an atom-thick sheet of carbon, on copper-covered quartz. They believe an air leak caused the copper to react with the quartz, which is also made of silicon and oxygen, producing a glass layer with the graphene. The glass is a mere three atoms thick—the minimum thickness of silica glass—which makes it two-dimensional.

Direct Imaging of a Two-Dimensional Silica Glass on Graphene
Although this is the first time such a thin sheet of freestanding glass has been produced, the image, taken with an electron microscope, isn’t entirely new. The “pane” of glass, so impossibly thin that its individual silicon and oxygen atoms are clearly visible via electron microscopy, was identified in the lab of David A. Muller, professor of applied and engineering physics and director of the Kavli Institute at Cornell for Nanoscale Science.
The two-dimensional glass could find a use in transistors, by providing a defect-free, ultra-thin material that could improve the performance of processors in computers and smartphones.

The paper, “Direct Imaging of a Two-Dimensional Silica Glass on Graphene,” was published in Nano Letters on Jan. 23, 2012, with first authors Pinshane Huang, a Cornell graduate student, and Simon Kurash, a University of Ulm graduate student. It includes collaborators from the University of Ulm, Germany; the Max Planck institute for Solid State Research in Germany; University of Vienna; University of Helsinki; and Aalto University in Finland.

Source: http://pubs.acs.org/
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Black Silicon Solar Cells With 20% Efficiency

Scientists at Aalto University, Finland and Fraunhofer ISE, Germany report an efficiency of 18.7% for black silicon solar cells, the highest efficiency reported so far for a black silicon solar cell.
The researchers were able to apply a boron diffusion to create a pn-junction, maintaining the excellent optical properties of the black silicon structure. By applying atomic layer deposited Al203, an effective passivation of the nanostructured surfaces was achieved. The previous efficiency record of 18.2% was held by the U.S. Department of Energy’s National Renewable Energy Laboratory (NREL) using thermal oxidation as a passivating layer.

black silicon solar cells

The quantum efficiency measurements reveal that the nanostructured front surface is of a high electrical quality comparable to a pyramidal textured surface”, says Assistant Professor Hele Savin of Aalto University.
Routes for improving the cell efficiency are already identified, and efficiencies clearly above 20% should be within reach.
Source: http://www.aalto.fi/

Solar Cells: Huge Improvement in Light Absorption

Scientists at Aalto University – Finland, have demonstrated results that show a huge improvement in the light absorption and the surface passivation of silicon nanostructures. This has been achieved by applying atomic layer coating. The results advance the development of devices that require high sensitivity light response such as high efficiency solar cells.
Solar-Power
– This method provides extremely good surface passivation. Simultaneously, it reduces the reflectance further at all wavelengths.These results are very promising considering the use of black silicon (b-Si) surfaces on solar cells to increase the efficiency to completely new levels, tells researcher scientist. Päivikki Repo.
More effective surface passivation methods than those used in the past have been needed to make black silicon a viable material for commercial applications. Good surface passivation is crucial in photonic applications such as solar cells. The research has just been published in the Journal of Photovoltaics. The research is carried out by Aalto University, Finland, together with experts from Fraunhofer Institute for Solar Energy Systems ISE, Germany.
Source: http://www.aalto.fi

Machines Fabrication At Nanoscale

The fabrication of many objects, machines, and devices around us rely on the controlled deformation of metals by industrial processes such as bending, shearing, and stamping. Is this technology transferrable to nanoscale? Can we build similarly complex devices and machines with very small dimensions? Scientists from Aalto University in Finland and the University of Washington in the US have just demonstrated this to be possible. By combining ion processing and nanolithography they have managed to create complex three-dimensional structures at nanoscale. The discovery follows from a quest for understanding the irregular folding of metallic thin films after being processed by reactive ion etching.

We were puzzled by the strong-width-dependent curvatures in the metallic strips. Usually initially-strained bilayer metals do not curl up this way, explains Khattiya Chalapat from Aalto University.
Source: http://www.aalto.fi/en/current/news/view/2012-10-18/