Ultrafast Flexible Electronic Memory

Engineering experts from the University of Exeter (UK) have developed innovative new memory using a hybrid of graphene oxide and titanium oxide. Their devices are low cost and eco-friendly to produce, are also perfectly suited for use in flexible electronic devices such as ‘bendablemobile phone, computer and television screens, and even ‘intelligentclothing.
. Crucially, these devices may also have the potential to offer a cheaper and more adaptable alternative to ‘flash memory’, which is currently used in many common devices such as memory cards, graphics cards and USB computer drives. The research team insist that these innovative new devices have the potential to revolutionise not only how data is stored, but also take flexible electronics to a new age in terms of speed, efficiency and power.

bendable mobile phone

Using graphene oxide to produce memory devices has been reported before, but they were typically very large, slow, and aimed at the ‘cheap and cheerful’ end of the electronics goods market”, said Professor David Wright, an Electronic Engineering expert from the University of Exeter.

Our hybrid graphene oxide-titanium oxide memory is, in contrast, just 50 nanometres long and 8 nanometres thick and can be written to and read from in less than five nanoseconds – with one nanometre being one billionth of a metre and one nanosecond a billionth of a second.”

The research is published in the scientific journal ACS Nano.

Source: http://www.exeter.ac.uk/

Super-fast RAM Memory

Researchers at University College London – Great Britain, have developed  the first purely silicon oxide-based ‘Resistive RAM’ memory chip that can operate in ambient conditions – opening up the possibility of new super-fast memoryResistive RAM (or ‘ReRAM’) memory chips are based on materials, most often oxides of metals, whose electrical resistance changes when a voltage is applied – and they “remember” this change even when the power is turned off. ReRAM chips promise significantly greater memory storage than current technology, such as the Flash memory used on USB sticks, and require much less energy and space.

Dr Tony Kenyon, UCL Electronic and Electrical Engineering, said: “Our ReRAM memory chips need just a thousandth of the energy and are around a hundred times faster than standard Flash memory chips. The fact that the device can operate in ambient conditions and has a continuously variable resistance opens up a huge range of potential applications."

Source: http://www.ucl.ac.uk/news/news-articles/May2012/120518-new-silicon-memory-chip